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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 130A; 300W


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Product information

Item number:
     4MD6L-LGE3M35120Q
Manufacturer:
     LUGUANG ELECTRONIC
Manufacturer no.:
     LGE3M35120Q
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: LUGUANG ELECTRONIC
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 148nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 130A
Other search terms: Transistors, power transistor
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from € 14.32*
  
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€ 28.06
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€ 17.61
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