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Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263


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Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Item number:
     4MD6L-IXYA8N90C3D1
Manufacturer:
     IXYS
Manufacturer no.:
     IXYA8N90C3D1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
SMD transistor
SMD transistors
Manufacturer: IXYS
Mounting: SMD
Case: TO263
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Kind of package: tube
Gate charge: 13.3nC
Technology: Planar;GenX3™;XPT™
Other search terms: Transistor, Transistors, smd transistor
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