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Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns


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Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns
Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns
Item number:
     4MD6L-IXTR90P10P
Manufacturer:
     IXYS
Manufacturer no.:
     IXTR90P10P
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: IXYS
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 144ns
Drain-source voltage: -100V
Drain current: -57A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
Kind of package: tube
Unit price: No
Gate charge: 0.12µC
#Promotion: aac_202202
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
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