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Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns


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Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Item number:
     4MD6L-IXTP76P10T
Manufacturer:
     IXYS
Manufacturer no.:
     IXTP76P10T
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: IXYS
Mounting: THT
Case: TO220AB
Reverse recovery time: 70ns
Drain-source voltage: -100V
Drain current: -76A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
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