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Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns


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Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Item number:
     4MD6L-IXTH32P20T
Manufacturer:
     IXYS
Manufacturer no.:
     IXTH32P20T
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: IXYS
Mounting: THT
Case: TO247-3
Reverse recovery time: 190ns
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
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