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Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268; Features: high voltage


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Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268; Features: high voltage
Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268; Features: high voltage
Item number:
     4MD6L-IXGT6N170A
Manufacturer:
     IXYS
Manufacturer no.:
     IXGT6N170A
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
SMD transistor
SMD transistors
Manufacturer: IXYS
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 3A
Pulsed collector current: 14A
Turn-on time: 91ns
Turn-off time: 271ns
Type of transistor: IGBT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 18.5nC
Technology: NPT
Other search terms: Transistor, Transistors, smd transistor
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