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Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268


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Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Item number:
     4MD6L-IXGT16N170A
Manufacturer:
     IXYS
Manufacturer no.:
     IXGT16N170A
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
SMD transistor
SMD transistors
Manufacturer: IXYS
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Unit price: No
Features of semiconductor devices: high voltage
Gate charge: 70nC
#Promotion: aac_202202
Technology: NPT
Other search terms: Transistor, Transistors
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