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Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3


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Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Item number:
     4MD6L-IPD65R250E6XTMA1
Manufacturer:
     Infineon
Manufacturer no.:
     IPD65R250E6XTMA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: SMD
Case: PG-TO252-3
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Unit price: No
#Promotion: aac_202202
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Other search terms: SMD transistors, Transistor, Transistors
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