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Transistor: IGBT; 650V; 40A; 152W; TO247-3


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Transistor: IGBT; 650V; 40A; 152W; TO247-3
Transistor: IGBT; 650V; 40A; 152W; TO247-3
Item number:
     4MD6L-IHW40N65R5XKSA1
Manufacturer:
     Infineon
Manufacturer no.:
     IHW40N65R5XKSA1
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 59ns
Turn-off time: 273ns
Type of transistor: IGBT
Power dissipation: 152W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 193nC
Technology: TRENCHSTOP™ 5
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