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Transistor: IGBT; 600V; 44A; 115W; TO3PN

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piece

Product information

Transistor: IGBT; 600V; 44A; 115W; TO3PN

Item number:
4MD6L-GT50JR22

Manufacturer:
Toshiba

Manufacturer no.:
GT50JR22(STA1,E,S)

EAN/GTIN:
n/a

Search terms:

IGBT
Power transistor
Transistor
Transistors

Manufacturer: TOSHIBA
Mounting: THT
Case: TO3PN
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 44A
Pulsed collector current: 100A
Turn-on time: 250ns
Turn-off time: 330ns
Type of transistor: IGBT
Power dissipation: 115W
Kind of package: tube
Unit price: No
Features of semiconductor devices: integrated anti-parallel diode
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... > IGBT transistors and modules > IGBT transistors > THT IGBT transistors

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Order quantity	Net	Gross	Unit

1 piece	€ 4.88*	€ 6.00	per piece
from 5 pieces	€ 4.78*	€ 5.88	per piece
from 10 pieces	€ 3.69*	€ 4.54	per piece
from 20 pieces	€ 3.47*	€ 4.27	per piece
from 25 pieces	€ 3.33*	€ 4.10	per piece
from 50 pieces	€ 3.25*	€ 4.00	per piece
from 7500 pieces	€ 2.78*	€ 3.42	per piece

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