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Transistor: IGBT; 600V; 49A; 230W; TO3PN


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Transistor: IGBT; 600V; 49A; 230W; TO3PN
Transistor: IGBT; 600V; 49A; 230W; TO3PN
Item number:
     4MD6L-GT50JR21
Manufacturer:
     Toshiba
Manufacturer no.:
     GT50JR21(STA1,E,S)
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: TOSHIBA
Mounting: THT
Case: TO3PN
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 49A
Pulsed collector current: 100A
Turn-on time: 430ns
Turn-off time: 720ns
Type of transistor: IGBT
Power dissipation: 230W
Kind of package: tube
Unit price: No
Features of semiconductor devices: integrated anti-parallel diode
#Promotion: aac_202202
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from € 2.98*
  
Price is valid from 7,500 pieces
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€ 4.20*
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€ 3.60*
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