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Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0


Quantity:  piece  
Product information

Item number:
     4MD6L-GD25PJY120L3S
Manufacturer:
     STARPOWER SEMICONDUCTOR
Manufacturer no.:
     GD25PJY120L3S
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Transistor
Transistors
Manufacturer: STARPOWER SEMICONDUCTOR
Case: L3.0
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: three-phase diode bridge;NTC thermistor;boost chopper;IGBT three-phase bridge OE output
Other search terms: diode module
An overview of the conditions1
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Price
from € 34.25*
  
Price is valid from 3,000 pieces
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Staggered prices
Order quantity
Net
Gross
Unit
1 piece
€ 52.63*
€ 64.73
per piece
from 2 pieces
€ 51.48*
€ 63.32
per piece
from 4 pieces
€ 45.47*
€ 55.93
per piece
from 5 pieces
€ 44.44*
€ 54.66
per piece
from 10 pieces
€ 44.24*
€ 54.42
per piece
from 16 pieces
€ 39.77*
€ 48.92
per piece
from 20 pieces
€ 38.31*
€ 47.12
per piece
from 3000 pieces
€ 34.25*
€ 42.13
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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