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Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2


Quantity:  piece  
Product information

Item number:
     4MD6L-GD15PJY120L2S
Manufacturer:
     STARPOWER SEMICONDUCTOR
Manufacturer no.:
     GD15PJY120L2S
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Transistor
Transistors
Manufacturer: STARPOWER SEMICONDUCTOR
Case: L2.2
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: three-phase diode bridge;NTC thermistor;boost chopper;IGBT three-phase bridge OE output
Other search terms: diode module
An overview of the conditions1
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from € 21.92*
  
Price is valid from 3,000 pieces
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Staggered prices
Order quantity
Net
Gross
Unit
1 piece
€ 37.70*
€ 46.37
per piece
from 2 pieces
€ 36.18*
€ 44.50
per piece
from 3 pieces
€ 32.03*
€ 39.40
per piece
from 5 pieces
€ 31.14*
€ 38.30
per piece
from 10 pieces
€ 30.42*
€ 37.42
per piece
from 12 pieces
€ 27.34*
€ 33.63
per piece
from 20 pieces
€ 26.43*
€ 32.51
per piece
from 24 pieces
€ 24.58*
€ 30.23
per piece
from 3000 pieces
€ 21.92*
€ 26.96
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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