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Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2


Quantity:  piece  
Product information

Item number:
     4MD6L-GD10PJY120L2S
Manufacturer:
     STARPOWER SEMICONDUCTOR
Manufacturer no.:
     GD10PJY120L2S
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Transistor
Transistors
Manufacturer: STARPOWER SEMICONDUCTOR
Case: L2.2
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: three-phase diode bridge;NTC thermistor;boost chopper;IGBT three-phase bridge OE output
Other search terms: diode module
An overview of the conditions1
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Price
from € 20.05*
  
Price is valid from 3,000 pieces
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Staggered prices
Order quantity
Net
Gross
Unit
1 piece
€ 32.43*
€ 39.89
per piece
from 2 pieces
€ 31.17*
€ 38.34
per piece
from 3 pieces
€ 27.58*
€ 33.92
per piece
from 5 pieces
€ 26.88*
€ 33.06
per piece
from 10 pieces
€ 26.26*
€ 32.30
per piece
from 12 pieces
€ 23.57*
€ 28.99
per piece
from 20 pieces
€ 22.95*
€ 28.23
per piece
from 24 pieces
€ 22.74*
€ 27.97
per piece
from 3000 pieces
€ 20.05*
€ 24.66
per piece
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