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Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1


Quantity:  piece  
Product information

Item number:
     4MD6L-GD10PJY120F1S
Manufacturer:
     STARPOWER SEMICONDUCTOR
Manufacturer no.:
     GD10PJY120F1S
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Transistor
Transistors
Manufacturer: STARPOWER SEMICONDUCTOR
Case: F1.1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: three-phase diode bridge;NTC thermistor;boost chopper;IGBT three-phase bridge OE output
Other search terms: diode module
An overview of the conditions1
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Stock level
Price
from € 22.16*
  
Price is valid from 3,000 pieces
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Staggered prices
Order quantity
Net
Gross
Unit
1 piece
€ 35.75*
€ 43.97
per piece
from 2 pieces
€ 34.20*
€ 42.07
per piece
from 3 pieces
€ 30.18*
€ 37.12
per piece
from 5 pieces
€ 29.35*
€ 36.10
per piece
from 10 pieces
€ 25.88*
€ 31.83
per piece
from 20 pieces
€ 25.08*
€ 30.85
per piece
from 25 pieces
€ 24.84*
€ 30.55
per piece
from 3000 pieces
€ 22.16*
€ 27.26
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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