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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W


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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Item number:
     4MD6L-G3R30MT12K
Manufacturer:
     Genesic Semiconductor
Manufacturer no.:
     G3R30MT12K
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: GeneSiC SEMICONDUCTOR
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 63A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 155nC
Technology: SiC;G3R™
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 200A
Other search terms: Transistors, power transistor
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