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Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W


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Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W
Item number:
     4MD6L-G3R160MT17J
Manufacturer:
     Genesic Semiconductor
Manufacturer no.:
     G3R160MT17J
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: GeneSiC SEMICONDUCTOR
Mounting: SMD
Case: TO263-7
Drain-source voltage: 1.7kV
Drain current: 15A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 187W
Polarisation: unipolar
Kind of package: tube
Unit price: No
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
#Promotion: aac_202202
Technology: SiC;G3R™
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 48A
Other search terms: SMD transistors, Transistor, Transistors
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