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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W


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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Item number:
     4MD6L-G3R160MT12D
Manufacturer:
     Genesic Semiconductor
Manufacturer no.:
     G3R160MT12D
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: GeneSiC SEMICONDUCTOR
Mounting: THT
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 123W
Polarisation: unipolar
Kind of package: tube
Unit price: No
Gate charge: 28nC
#Promotion: aac_202202
Technology: SiC;G3R™
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 40A
Other search terms: Transistors
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