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Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W


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Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W
Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W
Item number:
     4MD6L-FQP8P10
Manufacturer:
     onsemi
Manufacturer no.:
     FQP8P10
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: ONSEMI
Mounting: THT
Case: TO220AB
Drain-source voltage: -100V
Drain current: -5.7A
On-state resistance: 530mΩ
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -32A
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