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Module: IGBT; transistor/transistor,common emitter; IGBT x2


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Module: IGBT; transistor/transistor,common emitter; IGBT x2
Module: IGBT; transistor/transistor,common emitter; IGBT x2
Item number:
     4MD6L-FF200R12KT3E
Manufacturer:
     Infineon
Manufacturer no.:
     FF200R12KT3EHOSA1
EAN/GTIN:
     n/a
Search terms:
IGBT modules
Power transistor
Transistor
Transistors
Manufacturer: INFINEON TECHNOLOGIES
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor;common emitter
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: screw;FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT x2
An overview of the conditions1
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Price
from € 95.83*
  
Price is valid from 500 pieces
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Staggered prices
Order quantity
Net
Gross
Unit
1 piece
€ 139.79*
€ 171.94
per piece
from 2 pieces
€ 133.54*
€ 164.25
per piece
from 3 pieces
€ 118.13*
€ 145.30
per piece
from 5 pieces
€ 117.87*
€ 144.98
per piece
from 10 pieces
€ 100.80*
€ 123.98
per piece
from 500 pieces
€ 95.83*
€ 117.87
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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