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Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A


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Product information
Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Item number:
     4MD6L-FF200R12KE3
Manufacturer:
     Infineon
Manufacturer no.:
     FF200R12KE3HOSA1
EAN/GTIN:
     n/a
Search terms:
IGBT modules
Power transistor
Gilt moulding pin
Gilt moulding pins
Manufacturer: INFINEON TECHNOLOGIES
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
An overview of the conditions1
Delivery period
Stock level
Price
from € 157.08*
  
Price is valid from 500 pieces
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Staggered prices
Order quantity
Net
Gross
Unit
1 piece
€ 257.08*
€ 316.21
per piece
from 2 pieces
€ 249.51*
€ 306.90
per piece
from 3 pieces
€ 215.02*
€ 264.47
per piece
from 5 pieces
€ 206.77*
€ 254.33
per piece
from 10 pieces
€ 164.44*
€ 202.26
per piece
from 500 pieces
€ 157.08*
€ 193.21
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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