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Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN


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Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Item number:
     4MD6L-FDA59N30
Manufacturer:
     onsemi
Manufacturer no.:
     FDA59N30
EAN/GTIN:
     n/a
Search terms:
Digital transistor
Power transistor
MOSFET
MOSFET transistor
Manufacturer: ONSEMI
Mounting: THT
Case: TO3PN
Drain-source voltage: 300V
Drain current: 35A
On-state resistance: 56mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 236A
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€ 2.78
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