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Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max


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Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Item number:
     4MD6L-APT35GP120B2D2G
Manufacturer:
     MICROCHIP (MICROSEMI)
Manufacturer no.:
     APT35GP120B2D2G
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: MICROCHIP (MICROSEMI)
Mounting: THT
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 46A
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 543W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 150nC
Technology: POWER MOS 7®;PT
Other search terms: power transistor
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