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Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3


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Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Item number:
     4MD6L-APT15GP90BDQ1G
Manufacturer:
     MICROCHIP (MICROSEMI)
Manufacturer no.:
     APT15GP90BDQ1G
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: MICROCHIP (MICROSEMI)
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 21A
Pulsed collector current: 60A
Turn-on time: 23ns
Turn-off time: 170ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Unit price: No
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 60nC
#Promotion: aac_202202
Technology: POWER MOS 7®;PT
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