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Transistor: IGBT; 650V; 10A; 12W; TO220F; Eoff: 0.13mJ; Eon: 0.18mJ


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Transistor: IGBT; 650V; 10A; 12W; TO220F; Eoff: 0.13mJ; Eon: 0.18mJ
Transistor: IGBT; 650V; 10A; 12W; TO220F; Eoff: 0.13mJ; Eon: 0.18mJ
Item number:
     4MD6L-AOTF10B65M2
Manufacturer:
     Alpha & Omega Semiconductor
Manufacturer no.:
     AOTF10B65M2
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: ALPHA & OMEGA SEMICONDUCTOR
Mounting: THT
Case: TO220F
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.6V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 28ns
Turn-off time: 131ns
Type of transistor: IGBT
Power dissipation: 12W
Kind of package: tube
Gate charge: 24nC
Turn-on switching energy: 0.18mJ
Turn-off switching energy: 0.13mJ
Other search terms: power transistor
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