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Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W


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Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W
Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W
Item number:
     4MD6L-2N7002BK.215
Manufacturer:
     Nexperia
Manufacturer no.:
     2N7002BK,215
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT23;TO236AB
Drain-source voltage: 60V
Drain current: 0.245A
On-state resistance:
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Gate charge: 0.6nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
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