Transistor modules MOSFET (102 items)

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 128ns Drain-source voltage: 200V Drain current: 160A On-state resistance: 6.2mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 200V Drain current: 220A On-state resistance: 7.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 172ns Drain-source voltage: 200V Drain current: 300A On-state resistance: 3.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 135ns Drain-source voltage: 250V Drain current: 146A On-state resistance: 7.4mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 168A On-state resistance: 12.9mΩ Power dissipation...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 165ns Drain-source voltage: 250V Drain current: 240A On-state resistance: 4.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 266ns Drain-source voltage: 250V Drain current: 90A On-state resistance: 36mΩ Power dissipation: 7...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 110A On-state resistance: 24mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 130A On-state resistance: 19mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 300V Drain current: 192A On-state resistance: 14.5mΩ Power dissipation...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 190ns Drain-source voltage: 300V Drain current: 210A On-state resistance: 4.6mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 485ns Drain-source voltage: 300V Drain current: 80A On-state resistance: 38mΩ Power dissipation: 7...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 86A On-state resistance: 33mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 100ns Drain-source voltage: 40V Drain current: 600A On-state resistance: 1.3mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 60ns Drain-source voltage: 40V Drain current: 660A On-state resistance: 0.85mΩ Power dissipation: ...