Transistor modules MOSFET (101 items)

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 165ns Drain-source voltage: 250V Drain current: 240A On-state resistance: 4.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 43A On-state resistance: 0.16Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 570mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 245ns Drain-source voltage: 100V Drain current: 178A On-state resistance: 11mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 980ns Drain-source voltage: 500V Drain current: 53A On-state resistance: 0.1Ω Power dissipation: 7...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 266ns Drain-source voltage: 250V Drain current: 90A On-state resistance: 36mΩ Power dissipation: 7...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 132ns Drain-source voltage: 150V Drain current: 400A On-state resistance: 2.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 170V Drain current: 260A On-state resistance: 5.2mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: -100V Drain current: -210A On-state resistance: 7.5mΩ Power dissipatio...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 63A On-state resistance: 65mΩ Power dissipation: 7...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 270ns Drain-source voltage: 650V Drain current: 170A On-state resistance: 13mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 150V Drain current: 310A On-state resistance: 4mΩ Power dissipation: 1...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 260ns Drain-source voltage: 1kV Drain current: 44A On-state resistance: 0.125Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 220ns Drain-source voltage: 650V Drain current: 108A On-state resistance: 24mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 420ns Drain-source voltage: 200V Drain current: 100A On-state resistance: 24mΩ Power dissipation: ...