Transistor modules MOSFET (102 items)

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 1.2kV Drain current: 32A On-state resistance: 0.31Ω Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 54ns Drain-source voltage: 1.2kV Drain current: 48A On-state resistance: 50mΩ Polarisation: unipol...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 1.7µs Drain-source voltage: 1.5kV Drain current: 7.5A On-state resistance: 3.6Ω Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Drain-source voltage: 1.7kV Drain current: 67A On-state resistance: 23mΩ Polarisation: unipolar Electrical mounting: scre...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 245ns Drain-source voltage: 100V Drain current: 178A On-state resistance: 11mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 100V Drain current: 200A On-state resistance: 7.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 76ns Drain-source voltage: 100V Drain current: 200A On-state resistance: 5.5mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 100V Drain current: 295A On-state resistance: 5.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 130ns Drain-source voltage: 100V Drain current: 360A On-state resistance: 2.6mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 140ns Drain-source voltage: 100V Drain current: 420A On-state resistance: 2.3mΩ Power dissipation:...

Manufacturer: IXYS Case: Y3-DCB Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 100V Drain current: 590A On-state resistance: 2.1mΩ Power dissipation: ...

Manufacturer: IXYS Case: Y3-DCB Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 100V Drain current: 690A On-state resistance: 1.8mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 150V Drain current: 150A On-state resistance: 11mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 140ns Drain-source voltage: 150V Drain current: 240A On-state resistance: 5.2mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 150V Drain current: 310A On-state resistance: 4mΩ Power dissipation: 1...