Transistor modules MOSFET (101 items)

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 140ns Drain-source voltage: 100V Drain current: 420A On-state resistance: 2.3mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 75V Drain current: 480A On-state resistance: 1.9mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 39A On-state resistance: 0.19Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 650V Drain current: 78A On-state resistance: 30mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 477ns Drain-source voltage: -500V Drain current: -40A On-state resistance: 0.23Ω Power dissipation...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 128ns Drain-source voltage: 200V Drain current: 160A On-state resistance: 6.2mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 76ns Drain-source voltage: 100V Drain current: 200A On-state resistance: 5.5mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 112A On-state resistance: 39mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 600V Drain current: 90A On-state resistance: 56mΩ Power dissipation: 1...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 485ns Drain-source voltage: 300V Drain current: 80A On-state resistance: 38mΩ Power dissipation: 7...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 27A On-state resistance: 0.32Ω Power dissipation: 6...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 135ns Drain-source voltage: 250V Drain current: 146A On-state resistance: 7.4mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 100ns Drain-source voltage: 40V Drain current: 600A On-state resistance: 1.3mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 600V Drain current: 50A On-state resistance: 96mΩ Power dissipation: 7...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 600V Drain current: 72A On-state resistance: 75mΩ Power dissipation: 1...