Transistor modules MOSFET (161 items)

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 75V Drain current: 480A On-state resistance: 1.9mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.27Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 800V Drain current: 37A On-state resistance: 0.19Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 39A On-state resistance: 0.19Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 800ns Drain-source voltage: 800V Drain current: 44A On-state resistance: 74mΩ Power dissipation: 3...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 800V Drain current: 49A On-state resistance: 0.14Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 53A On-state resistance: 0.14Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 205ns Drain-source voltage: 850V Drain current: 110A On-state resistance: 33mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 850V Drain current: 65A On-state resistance: 65mΩ Power dissipation: 8...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 850V Drain current: 90A On-state resistance: 41mΩ Power dissipation: 1...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 109A On-state resistance: 10mΩ Polarisation: unipolar Unit price: No Electrical...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 33A On-state resistance: 0.23Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 43A On-state resistance: 0.16Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 56A On-state resistance: 0.145Ω Power dissipation:...

Manufacturer: DACO Semiconductor Operating temperature: -55...150°C Case: HB9434 Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 110A On-state resistance: ...